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Growth Mechanism And Physical Properties Of The Type I In0 145ga0 855asysb1 Y Gasb Alloys With Low As Content For Near Infrared Applications Sciencedirect
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Electrical Modeling Of Inas Gasb Superlattice Mid Wavelength Infrared Pin Photodiode To Analyze Experimental Dark Current Characteristics Journal Of Applied Physics Vol 116 No 11
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Resolving Ambiguities In Nanowire Field Effect Transistor Characterization Nanoscale Rsc Publishing Doi 10 1039 C5nr03608a
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Table 2 From Investigation And Simulation Of Work Function Variation For Iii V Broken Gap Heterojunction Tunnel Fet Semantic Scholar
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Solution Processed Inas Nanowire Transistors As Microwave Switches Mirkhaydarov 2019 Advanced Electronic Materials Wiley Online Library
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Band Offsets Schottky Barrier Heights And Their Effects On Electronic Devices Journal Of Vacuum Science Technology A Vol 31 No 5
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